US6T8TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Number of Terminations :

6

Power - Max :

400mW

Power Dissipation-Max (Abs) :

0.4W

Pbfree Code :

yes

Lead Free :

Lead Free

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e2

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

12V

Peak Reflow Temperature (Cel) :

260

Configuration :

SEPARATE, 2 ELEMENTS

Vce Saturation (Max) @ Ib, Ic :

200mV @ 25mA, 500mA

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Transition Frequency :

400MHz

Package / Case :

6-SMD, Flat Leads

Published :

2007

Current - Collector (Ic) (Max) :

1.5A

Pin Count :

6

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Terminal Finish :

TIN COPPER

Number of Elements :

2

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency - Transition :

400MHz

JESD-30 Code :

R-PDSO-F6