US6T7TR
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- Mfr.Part #
- US6T7TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A TUMT6
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 30V
- ECCN Code :
- EAR99
- Max Collector Current :
- 1.5A
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Power - Max :
- 1W
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -1.5A
- Voltage - Rated DC :
- -30V
- Published :
- 2007
- Number of Elements :
- 1
- Pin Count :
- 6
- Max Breakdown Voltage :
- 30V
- Number of Terminations :
- 6
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 280MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 50mA, 1A
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- TIN COPPER
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e2
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Base Part Number :
- US6T
- Collector Base Voltage (VCBO) :
- 30V
- Number of Pins :
- 6
- Radiation Hardening :
- No
- Element Configuration :
- Single
- hFE Min :
- 270
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transition Frequency :
- 280MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- 6-SMD, Flat Leads
- Datasheets
- US6T7TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6T7TR Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 370mV @ 50mA, 1A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
US6T7TR Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is -1.5A
a transition frequency of 280MHz
US6T7TR Applications
There are a lot of ROHM Semiconductor
US6T7TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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