US6T7TR
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- Mfr.Part #
- US6T7TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A TUMT6
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 270
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- 6-SMD, Flat Leads
- Max Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- -30V
- Transition Frequency :
- 280MHz
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 50mA, 1A
- Number of Terminations :
- 6
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 6
- Gain Bandwidth Product :
- 280MHz
- JESD-609 Code :
- e2
- Collector Base Voltage (VCBO) :
- 30V
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 6V
- Current Rating :
- -1.5A
- Max Collector Current :
- 1.5A
- Published :
- 2007
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Base Part Number :
- US6T
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1W
- Power - Max :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Terminal Finish :
- TIN COPPER
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Datasheets
- US6T7TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6T7TR Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 370mV @ 50mA, 1A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
US6T7TR Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is -1.5A
a transition frequency of 280MHz
US6T7TR Applications
There are a lot of ROHM Semiconductor
US6T7TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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