US6T4TR

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Mfr.Part #
US6T4TR
Manufacturer
ROHM Semiconductor
Package / Case
6-SMD, Flat Leads
Datasheet
Download
Description
TRANS PNP 12V 3A TUMT6
Stock
1,987
In Stock :
1,987

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
270
Number of Elements :
1
Number of Terminations :
6
Max Power Dissipation :
1W
JESD-609 Code :
e2
Number of Pins :
6
Current - Collector (Ic) (Max) :
3A
Vce Saturation (Max) @ Ib, Ic :
250mV @ 30mA, 1.5A
Peak Reflow Temperature (Cel) :
260
Package / Case :
6-SMD, Flat Leads
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Base Part Number :
US6T
Max Collector Current :
3A
Terminal Finish :
TIN COPPER
Collector Emitter Breakdown Voltage :
12V
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
10
Transistor Type :
PNP
Published :
2007
Pin Count :
6
Current - Collector Cutoff (Max) :
100nA ICBO
Gain Bandwidth Product :
280MHz
Element Configuration :
Single
Transistor Element Material :
SILICON
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
280MHz
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
270 @ 500mA 2V
Terminal Position :
Dual
Factory Lead Time :
12 Weeks
Collector Emitter Voltage (VCEO) :
12V
Transistor Application :
AMPLIFIER
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
15V
Mounting Type :
Surface Mount
Emitter Base Voltage (VEBO) :
6V
Datasheets
US6T4TR
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor US6T4TR from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Number of Pins:6, Package / Case:6-SMD, Flat Leads, Base Part Number:US6T, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, US6T4TR pinout, US6T4TR datasheet PDF, US6T4TR amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor US6T4TR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor US6T4TR


PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount

US6T4TR Overview


In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

US6T4TR Features


the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz


US6T4TR Applications


There are a lot of ROHM Semiconductor
US6T4TR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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