US6T4TR
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- Mfr.Part #
- US6T4TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A TUMT6
- Stock
- 1,987
- In Stock ：
- 1,987
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 15V
- Max Collector Current :
- 3A
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 1W
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 6
- Current - Collector (Ic) (Max) :
- 3A
- Package / Case :
- 6-SMD, Flat Leads
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 12V
- Transistor Element Material :
- SILICON
- Pin Count :
- 6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transition Frequency :
- 280MHz
- Number of Terminations :
- 6
- Published :
- 2007
- Gain Bandwidth Product :
- 280MHz
- Collector Emitter Voltage (VCEO) :
- 12V
- JESD-609 Code :
- e2
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Terminal Finish :
- TIN COPPER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 270
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- US6T
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Datasheets
- US6T4TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6T4TR Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
US6T4TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
US6T4TR Applications
There are a lot of ROHM Semiconductor
US6T4TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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