US6T4TR
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- Mfr.Part #
- US6T4TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A TUMT6
- Stock
- 1,987
- In Stock ：
- 1,987
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 12V
- Gain Bandwidth Product :
- 280MHz
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector (Ic) (Max) :
- 3A
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1W
- Number of Pins :
- 6
- Collector Base Voltage (VCBO) :
- 15V
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Base Part Number :
- US6T
- Terminal Finish :
- TIN COPPER
- Number of Terminations :
- 6
- hFE Min :
- 270
- Transition Frequency :
- 280MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Radiation Hardening :
- No
- Package / Case :
- 6-SMD, Flat Leads
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 12V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e2
- Max Collector Current :
- 3A
- Pin Count :
- 6
- Factory Lead Time :
- 12 Weeks
- Datasheets
- US6T4TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6T4TR Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
US6T4TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
US6T4TR Applications
There are a lot of ROHM Semiconductor
US6T4TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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