UMH1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e2

Lead Free :

Lead Free

Element Configuration :

Dual

Max Power Dissipation :

150mW

Collector Emitter Voltage (VCEO) :

300mV

hFE Min :

56

Factory Lead Time :

10 Weeks

Number of Elements :

2

DC Current Gain-Min (hFE) :

56

Current Rating :

30mA

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Terminal Finish :

Tin/Copper (Sn/Cu)

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

250MHz

Terminal Form :

Gull wing

Polarity :

NPN

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Package / Case :

SOT-363

Pin Count :

6

RoHS Status :

ROHS3 Compliant

VCEsat-Max :

0.3 V

Published :

2004

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Continuous Collector Current :

100mA

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Number of Terminations :

6

Number of Pins :

6

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.75

Voltage - Rated DC :

50V

Max Breakdown Voltage :

50V

Pbfree Code :

yes

Power Dissipation :

150mW

ECCN Code :

EAR99