UMH10NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

Max Output Current :

100mA

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

2.2k Ω

Terminal Finish :

Tin/Copper (Sn/Cu)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Current Rating :

100mA

Terminal Form :

Gull wing

Base Part Number :

*MH10

Max Power Dissipation :

150mW

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

HTS Code :

8541.21.00.75

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Type :

2 NPN - Pre-Biased (Dual)

Mount :

Surface Mount

Number of Elements :

2

Number of Terminations :

6

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

47k Ω

Lead Free :

Lead Free

Transition Frequency :

250MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Min Operating Temperature :

-55°C

Voltage - Rated DC :

50V

Frequency - Transition :

250MHz

Max Collector Current :

100mA

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Supply Voltage :

50V

Element Configuration :

Dual

Continuous Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

hFE Min :

80

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Published :

2011

Pin Count :

6