UMH1N-TP

Manufacturer :

Micro Commercial Components (MCC)

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Operating Temperature (Max) :

150°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Published :

2005

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Base (R1) :

22k Ω

Power - Max :

150mW

JESD-609 Code :

e3

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation-Max (Abs) :

0.15W

JESD-30 Code :

R-PDSO-G6

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

Current - Collector (Ic) (Max) :

100mA

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

UMH1N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

250MHz

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500nA

Surface Mount :

yes

Transition Frequency :

250MHz

Pin Count :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Elements :

2

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Transistor Type :

2 NPN - Pre-Biased (Dual)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

22k Ω

Time@Peak Reflow Temperature-Max (s) :

10