UMH11NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

REACH SVHC :

No SVHC

Max Collector Current :

100mA

Published :

2004

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Operating Supply Voltage :

50V

Max Output Current :

100mA

Factory Lead Time :

13 Weeks

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transistor Application :

SWITCHING

Max Power Dissipation :

150mW

Base Part Number :

*MH11

Voltage - Rated DC :

50V

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

250MHz

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

300mV

JESD-609 Code :

e2

Terminal Finish :

Tin/Copper (Sn/Cu)

Current Rating :

50mA

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

VCEsat-Max :

0.3 V

Resistor - Emitter Base (R2) :

10k Ω

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Pin Count :

6

Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

100mA

Pbfree Code :

yes

HTS Code :

8541.21.00.75

Number of Terminations :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Polarity :

NPN

hFE Min :

30

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

ECCN Code :

EAR99

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Resistor - Base (R1) :

10k Ω

Terminal Form :

Gull wing

Number of Elements :

2

Transition Frequency :

250MHz