UMH11NFHATN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Terminal Form :

Gull wing

Resistor - Base (R1) :

10k Ω

Number of Terminations :

6

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Resistor - Emitter Base (R2) :

10k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

Surface Mount :

yes

Max Operating Temperature :

150°C

Package / Case :

6-VSSOP, SC-88, SOT-363

Number of Elements :

2

Transition Frequency :

250MHz

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Pins :

6

Frequency - Transition :

250MHz

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Published :

2016

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500nA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Current - Collector (Ic) (Max) :

100mA