TK5A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Power Dissipation :

35W

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5A

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Drain to Source Resistance :

1.5Ohm

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Rise Time :

18ns

Drain to Source Breakdown Voltage :

500V

FET Type :

N-Channel

Input Capacitance :

490pF

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Fall Time (Typ) :

8 ns

Operating Temperature :

150°C TJ

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2.5A, 10V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Supplier Device Package :

TO-220SIS

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Number of Pins :

3

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

35W Tc

Series :

π-MOSVII

Max Operating Temperature :

150°C

Rds On Max :

1.5 Ω

Drain to Source Voltage (Vdss) :

500V