TK5A45DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

4.5A

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

30W Tc

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Fall Time (Typ) :

7 ns

Vgs (Max) :

±30V

Published :

2011

Rds On Max :

1.75 Ω

Max Operating Temperature :

150°C

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

450V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Number of Pins :

3

Rise Time :

18ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.75Ohm @ 2.3A, 10V

Packaging :

Tube

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Supplier Device Package :

TO-220SIS

Input Capacitance :

380pF

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Series :

π-MOSVII

Factory Lead Time :

16 Weeks