TK5A45DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220SIS

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Rise Time :

18ns

Power Dissipation-Max :

30W Tc

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

4.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

1.75Ohm @ 2.3A, 10V

Drain to Source Voltage (Vdss) :

450V

Mount :

Through Hole

Packaging :

Tube

Rds On Max :

1.75 Ω

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Series :

π-MOSVII

Vgs (Max) :

±30V

Factory Lead Time :

16 Weeks

Input Capacitance :

380pF

FET Type :

N-Channel

Published :

2011

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Mounting Type :

Through Hole

Fall Time (Typ) :

7 ns