TK5A80E,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

800 V

Input Capacitance (Ciss) (Max) @ Vds :

950 pF @ 25 V

Configuration :

Single

Product Category :

MOSFET

Vgs (Max) :

±30V

Minimum Operating Temperature :

- 55 C

FET Feature :

-

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

5A (Ta)

Product Status :

Active

Rise Time :

25 ns

Manufacturer :

Toshiba

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Series :

-

FET Type :

N-Channel

Transistor Type :

1 N-Channel

RoHS :

Details

Power Dissipation (Max) :

40W (Tc)

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 150 C

Supplier Device Package :

TO-220SIS

Package :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product Type :

MOSFET

Tradename :

MOSVII

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

2.4Ohm @ 2.5A, 10V

Brand :

Toshiba

Subcategory :

MOSFETs

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 500μA

Operating Temperature :

150°C