TK5A60W,S4VX
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- Mfr.Part #
- TK5A60W,S4VX
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5.4A TO220SIS
- Stock
- 4,842
- In Stock ：
- 4,842
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Capacitance :
- 380pF
- Power Dissipation-Max :
- 30W Tc
- Drain to Source Breakdown Voltage :
- 600V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 7 ns
- Packaging :
- Tube
- Factory Lead Time :
- 16 Weeks
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 2.7A, 10V
- Published :
- 2014
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 3.7V @ 270μA
- Gate Charge (Qg) (Max) @ Vgs :
- 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 300V
- Power Dissipation :
- 30W
- Turn-Off Delay Time :
- 50 ns
- Continuous Drain Current (ID) :
- 5.4A
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- DTMOSIV
- Rise Time :
- 18ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Ta
- FET Type :
- N-Channel
- FET Feature :
- Super Junction
- Datasheets
- TK5A60W,S4VX
N-Channel Tube 900m Ω @ 2.7A, 10V ±30V 380pF @ 300V 10.5nC @ 10V TO-220-3 Full Pack
TK5A60W,S4VX Overview
A device's maximum input capacitance is 380pF @ 300V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
TK5A60W,S4VX Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
TK5A60W,S4VX Applications
There are a lot of Toshiba Semiconductor and Storage
TK5A60W,S4VX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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