TK5A90E,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 450μA

Drain to Source Voltage (Vdss) :

900 V

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Series :

-

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

3.1Ohm @ 2.3A, 10V

Transistor Type :

1 N-Channel

Product Category :

MOSFET

Power Dissipation (Max) :

40W (Tc)

Configuration :

Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rise Time :

25 ns

Mounting Style :

Through Hole

Brand :

Toshiba

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

950 pF @ 25 V

RoHS :

Details

Product Status :

Active

FET Type :

N-Channel

Mounting Type :

Through Hole

FET Feature :

-

Tradename :

MOSVII

Channel Mode :

Enhancement

Supplier Device Package :

TO-220SIS

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Manufacturer :

Toshiba

Current - Continuous Drain (Id) @ 25°C :

4.5A (Ta)

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-220-3 Full Pack

Package :

Tube

Operating Temperature :

150°C

Maximum Operating Temperature :

+ 150 C

Number of Channels :

1 Channel

Subcategory :

MOSFETs