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  5. TK5A60D(STA4,Q,M)
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    Mfr.Part #
    TK5A60D(STA4,Q,M)
    Manufacturer
    Toshiba Electronic Devices and Storage Corporation
    Package / Case
    TO-220-3 Full Pack
    Datasheet
    Download
    Description
    MOSFET N-CH 600V 5A TO220SIS
    Stock
    14,435
    In Stock ：
    14,435

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    Manufacturer :
    Toshiba Electronic Devices and Storage Corporation
    Product Category :
    Transistors - FETs, MOSFETs - Single
    Packaging :
    Tube
    Element Configuration :
    Single
    Vgs (Max) :
    ±30V
    Operating Temperature :
    150°C TJ
    Input Capacitance (Ciss) (Max) @ Vds :
    700pF @ 25V
    RoHS Status :
    RoHS Compliant
    Rise Time :
    20ns
    Continuous Drain Current (ID) :
    5A
    Vgs(th) (Max) @ Id :
    4.4V @ 1mA
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    FET Type :
    N-Channel
    Series :
    π-MOSVII
    Turn-Off Delay Time :
    60 ns
    Rds On (Max) @ Id, Vgs :
    1.43 Ω @ 2.5A, 10V
    Mounting Type :
    Through Hole
    Fall Time (Typ) :
    11 ns
    Published :
    2010
    Drive Voltage (Max Rds On,Min Rds On) :
    10V
    Gate Charge (Qg) (Max) @ Vgs :
    16nC @ 10V
    Mount :
    Through Hole
    Gate to Source Voltage (Vgs) :
    30V
    Drain to Source Breakdown Voltage :
    600V
    Current - Continuous Drain (Id) @ 25°C :
    5A Ta
    Package / Case :
    TO-220-3 Full Pack
    Factory Lead Time :
    16 Weeks
    Number of Pins :
    3
    Radiation Hardening :
    No
    Power Dissipation-Max :
    35W Tc
    Power Dissipation :
    35W
    Datasheets
    TK5A60D(STA4,Q,M)
    Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK5A60D(STA4,Q,M) from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature：150°C TJ, Mounting Type：Through Hole, Package / Case：TO-220-3 Full Pack, Number of Pins：3, TK5A60D(STA4,Q,M) pinout, TK5A60D(STA4,Q,M) datasheet PDF, TK5A60D(STA4,Q,M) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK5A60D(STA4,Q,M) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

    Toshiba Electronic Devices and Storage Corporation TK5A60D(STA4,Q,M)


    N-Channel Tube 1.43 Ω @ 2.5A, 10V ±30V 700pF @ 25V 16nC @ 10V TO-220-3 Full Pack

    TK5A60D(STA4,Q,M) Overview


    CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).

    TK5A60D(STA4,Q,M) Features


    a continuous drain current (ID) of 5A
    a drain-to-source breakdown voltage of 600V voltage
    the turn-off delay time is 60 ns


    TK5A60D(STA4,Q,M) Applications


    There are a lot of Toshiba Semiconductor and Storage
    TK5A60D(STA4,Q,M) applications of single MOSFETs transistors.


    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
    • Industrial Power Supplies
    • PFC stages, hard switching PWM stages and resonant switching
    • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
    • Lighting, Server, Telecom and UPS.
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