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  5. TK5A65D(STA4,Q,M)
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    Mfr.Part #
    TK5A65D(STA4,Q,M)
    Manufacturer
    Toshiba Electronic Devices and Storage Corporation
    Package / Case
    TO-220-3 Full Pack
    Datasheet
    Download
    Description
    MOSFET N-CH 650V 5A TO220SIS
    Stock
    4,741
    In Stock ：
    4,741

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    Manufacturer :
    Toshiba Electronic Devices and Storage Corporation
    Product Category :
    Transistors - FETs, MOSFETs - Single
    Vgs (Max) :
    ±30V
    Rise Time :
    20ns
    Rds On (Max) @ Id, Vgs :
    1.43 Ω @ 2.5A, 10V
    Mounting Type :
    Through Hole
    Gate Charge (Qg) (Max) @ Vgs :
    16nC @ 10V
    Mount :
    Through Hole
    Current - Continuous Drain (Id) @ 25°C :
    5A Ta
    Continuous Drain Current (ID) :
    5A
    Published :
    2010
    Power Dissipation-Max :
    40W Tc
    FET Type :
    N-Channel
    Vgs(th) (Max) @ Id :
    4V @ 1mA
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Radiation Hardening :
    No
    Drain to Source Voltage (Vdss) :
    650V
    Operating Temperature :
    150°C TJ
    Drive Voltage (Max Rds On,Min Rds On) :
    10V
    RoHS Status :
    RoHS Compliant
    Gate to Source Voltage (Vgs) :
    30V
    Series :
    π-MOSVII
    Factory Lead Time :
    16 Weeks
    Number of Pins :
    3
    Packaging :
    Tube
    Package / Case :
    TO-220-3 Full Pack
    Input Capacitance (Ciss) (Max) @ Vds :
    800pF @ 25V
    Fall Time (Typ) :
    12 ns
    Datasheets
    TK5A65D(STA4,Q,M)
    Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK5A65D(STA4,Q,M) from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type：Through Hole, Operating Temperature：150°C TJ, Number of Pins：3, Package / Case：TO-220-3 Full Pack, TK5A65D(STA4,Q,M) pinout, TK5A65D(STA4,Q,M) datasheet PDF, TK5A65D(STA4,Q,M) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK5A65D(STA4,Q,M) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

    Toshiba Electronic Devices and Storage Corporation TK5A65D(STA4,Q,M)


    N-Channel Tube 1.43 Ω @ 2.5A, 10V ±30V 800pF @ 25V 16nC @ 10V 650V TO-220-3 Full Pack

    TK5A65D(STA4,Q,M) Overview


    Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 800pF @ 25V.This device has a continuous drain current (ID) of [5A], which is its maximum continuous current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

    TK5A65D(STA4,Q,M) Features


    a continuous drain current (ID) of 5A
    a 650V drain to source voltage (Vdss)


    TK5A65D(STA4,Q,M) Applications


    There are a lot of Toshiba Semiconductor and Storage
    TK5A65D(STA4,Q,M) applications of single MOSFETs transistors.


    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
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