TK5A55D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Operating Temperature :

150°C TJ

Fall Time (Typ) :

8 ns

Published :

2010

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

550V

Continuous Drain Current (ID) :

5A

Supplier Device Package :

TO-220SIS

Rds On Max :

1.7 Ω

Rise Time :

18ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

35W Tc

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.7Ohm @ 2.5A, 10V

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Max Operating Temperature :

150°C

Series :

π-MOSVII

FET Type :

N-Channel

Input Capacitance :

540pF