STP9NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5A

Number of Elements :

1

Turn-Off Delay Time :

45 ns

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

560m Ω @ 3.7A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Fall Time (Typ) :

19 ns

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

30A

Rise Time :

16ns

Series :

MDmesh™

Mount :

Through Hole

Drain to Source Breakdown Voltage :

500V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain-source On Resistance-Max :

0.56Ohm

Power Dissipation-Max :

70W Tc

Transistor Application :

SWITCHING

Power Dissipation :

70W

Package / Case :

TO-220-3

Base Part Number :

STP9N

Packaging :

Tube

Avalanche Energy Rating (Eas) :

150 mJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

25V

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 50V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE