STP90N55F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

ULTRA LOW-ON RESISTANCE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Number of Terminations :

3

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

360A

Pin Count :

3

FET Type :

N-Channel

Turn On Delay Time :

20 ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Turn-Off Delay Time :

55 ns

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

Not Applicable

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Radiation Hardening :

No

Number of Elements :

1

Factory Lead Time :

42 Weeks

Base Part Number :

STP90N

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Rise Time :

60ns

Avalanche Energy Rating (Eas) :

290 mJ

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

8m Ω @ 45A, 10V

Contact Plating :

Tin

Power Dissipation :

150W

Continuous Drain Current (ID) :

90A

Power Dissipation-Max :

150W Tc

Fall Time (Typ) :

30 ns

Series :

DeepGATE™, STripFET™

Mounting Type :

Through Hole

Packaging :

Tube

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Resistance :

8mOhm

Mount :

Through Hole

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V