STP9NK60ZFP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Series :

SuperMESH™

Fall Time (Typ) :

15 ns

ECCN Code :

EAR99

Number of Terminations :

3

Height :

16.4mm

Pulsed Drain Current-Max (IDM) :

28A

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

JESD-609 Code :

e3

Rise Time :

17ns

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Width :

4.6mm

Element Configuration :

Single

Power Dissipation-Max :

30W Tc

Drain-source On Resistance-Max :

0.95Ohm

Threshold Voltage :

3.75V

Continuous Drain Current (ID) :

7A

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

Case Connection :

Isolated

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

245

Power Dissipation :

30W

Length :

10.4mm

Mounting Type :

Through Hole

Turn On Delay Time :

19 ns

Weight :

4.535924g

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STP9N

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.5A, 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

43 ns

Packaging :

Tube