STP9NK60ZD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Pulsed Drain Current-Max (IDM) :

28A

Fall Time (Typ) :

15 ns

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

7A

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Mount :

Through Hole

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

600V

Drain-source On Resistance-Max :

0.95Ohm

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

600V

Drain Current-Max (Abs) (ID) :

7A

Power Dissipation-Max :

125W Tc

Mounting Type :

Through Hole

Number of Elements :

1

FET Type :

N-Channel

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.5A, 10V

Element Configuration :

Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

Pin Count :

3

Power Dissipation :

125W

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Vgs (Max) :

±30V

Current Rating :

7A

Packaging :

Tube

Reach Compliance Code :

not_compliant

Series :

SuperFREDmesh™

Turn-Off Delay Time :

42 ns

Rise Time :

17ns

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STP9N

Avalanche Energy Rating (Eas) :

235 mJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON