STP9NK50Z
- Mfr.Part #
- STP9NK50Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 7.2A TO220AB
- Stock
- 4,610
- In Stock :
- 4,610
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 910pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 3.6A, 10V
- Turn On Delay Time :
- 17 ns
- Length :
- 10.4mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Fall Time (Typ) :
- 22 ns
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- JESD-609 Code :
- e3
- Width :
- 4.6mm
- Rise Time :
- 20ns
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 45 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 7.2A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Power Dissipation :
- 110W
- Element Configuration :
- Single
- Voltage - Rated DC :
- 500V
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-220-3
- Factory Lead Time :
- 12 Weeks
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- STP9N
- Resistance :
- 850mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 3.75V
- Pulsed Drain Current-Max (IDM) :
- 28.8A
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 7.2A
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Tc
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Series :
- SuperMESH™
- Power Dissipation-Max :
- 110W Tc
- Height :
- 9.15mm
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pin Count :
- 3
- Radiation Hardening :
- No
- Datasheets
- STP9NK50Z

N-Channel Tube 850m Ω @ 3.6A, 10V ±30V 910pF @ 25V 32nC @ 10V TO-220-3
STP9NK50Z Description
The SuperMESHTM series is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM structure. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high-voltage MOSFETs, including the innovative MDmeshTM devices, is complemented by this series.
STP9NK50Z Features
-
RDS(on) TYPICAL = 0.72
-
CAPABILITY FOR EXTREMELY HIGH dv/dt
-
AVALANCHE TESTED TO THE MAXIMUM EXTENT
-
GATE CHARGE HAS BEEN REDUCED
-
INTRINSIC CAPACITANCES ARE VERY LOW.
-
VERY GOOD REPEATABILITY IN MANUFACTURING
STP9NK50Z Applications
-
SWITCHING AT HIGH CURRENT AND SPEED
-
PERFECT FOR OFF-LINE POWER SUPPLIES, PFC, AND ADAPTORS
-
LUMINOUS LIGHTING
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