STP9NK60Z
- Mfr.Part #
- STP9NK60Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7A TO220AB
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Width :
- 4.6mm
- Continuous Drain Current (ID) :
- 3.5A
- Current Rating :
- 7A
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- SuperMESH™
- Lead Free :
- Lead Free
- Power Dissipation :
- 125W
- Drain Current-Max (Abs) (ID) :
- 7A
- Mount :
- Through Hole
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Base Part Number :
- STP9N
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Turn On Delay Time :
- 19 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 43 ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 125W Tc
- Drain-source On Resistance-Max :
- 0.95Ohm
- Pulsed Drain Current-Max (IDM) :
- 28A
- Transistor Element Material :
- SILICON
- Height :
- 9.15mm
- Threshold Voltage :
- 3.75V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 3.5A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 600V
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Length :
- 10.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 17ns
- Factory Lead Time :
- 12 Weeks
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 15 ns
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Datasheets
- STP9NK60Z

N-Channel Tube 950m Ω @ 3.5A, 10V ±30V 1110pF @ 25V 53nC @ 10V TO-220-3
STP9NK60Z Description
These are N-channel Zener-protected Power MOSFETs designed with STMicroelectronics' SuperMESHTM technology, which was obtained by optimizing ST's well-known strip-based PowerMESHTM layout. This device is designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
STP9NK60Z Features
-
Extremely high dv/dt capability
-
Improved ESD capability
-
100% avalanche tested
-
Gate charge minimized
-
Very low intrinsic capacitances
STP9NK60Z Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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