STP9N60M2
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- Mfr.Part #
- STP9N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5.5A TO220
- Stock
- 4,361
- In Stock ：
- 4,361
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 22 ns
- Power Dissipation-Max :
- 60W Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 7.5ns
- Number of Pins :
- 3
- Series :
- MDmesh™ II Plus
- Vgs (Max) :
- ±25V
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 780mOhm
- Rds On (Max) @ Id, Vgs :
- 780m Ω @ 3A, 10V
- Fall Time (Typ) :
- 13.5 ns
- Base Part Number :
- STP9N
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn On Delay Time :
- 8.8 ns
- Height :
- 15.75mm
- Power Dissipation :
- 60W
- Gate to Source Voltage (Vgs) :
- 25V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Width :
- 4.6mm
- Length :
- 10.4mm
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 650V
- Factory Lead Time :
- 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 100V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 5.5A
- Datasheets
- STP9N60M2
N-Channel Tube 780m Ω @ 3A, 10V ±25V 320pF @ 100V 10nC @ 10V 600V TO-220-3
STP9N60M2 Overview
A device's maximal input capacitance is 320pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 22 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
STP9N60M2 Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 22 ns
a 600V drain to source voltage (Vdss)
STP9N60M2 Applications
There are a lot of STMicroelectronics
STP9N60M2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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