STP95N2LH5
- Mfr.Part #
- STP95N2LH5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 80A TO220AB
- Stock
- 32,400
- In Stock :
- 32,400
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- DS Breakdown Voltage-Min :
- 25V
- Power Dissipation-Max :
- 80W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Series :
- STripFET™ V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1817pF @ 25V
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 80A
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Drain to Source Voltage (Vdss) :
- 25V
- Drain-source On Resistance-Max :
- 0.007Ohm
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 165 mJ
- Pin Count :
- 3
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 95A
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Vgs (Max) :
- ±22V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 40A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 13.4nC @ 5V
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- STP95
- Number of Terminations :
- 3
- Datasheets
- STP95N2LH5

N-Channel Tube 4.9m Ω @ 40A, 10V ±22V 1817pF @ 25V 13.4nC @ 5V 25V TO-220-3
STP95N2LH5 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 165 mJ.The maximum input capacitance of this device is 1817pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.As shown in the table below, the drain current of this device is 95A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.
STP95N2LH5 Features
the avalanche energy rating (Eas) is 165 mJ
a continuous drain current (ID) of 80A
a 25V drain to source voltage (Vdss)
STP95N2LH5 Applications
There are a lot of STMicroelectronics
STP95N2LH5 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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