STP9N65M2
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- Mfr.Part #
- STP9N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 5A TO220
- Stock
- 963
- In Stock ：
- 963
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 6.6ns
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 650V
- Base Part Number :
- STP9N
- FET Type :
- N-Channel
- Turn On Delay Time :
- 7.5 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1
- Vgs (Max) :
- ±25V
- Gate to Source Voltage (Vgs) :
- 25V
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 2.5A, 10V
- Fall Time (Typ) :
- 18 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 60W Tc
- Continuous Drain Current (ID) :
- 5A
- Factory Lead Time :
- 16 Weeks
- Series :
- MDmesh™
- Weight :
- 329.988449mg
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Turn-Off Delay Time :
- 22.5 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Threshold Voltage :
- 3V
- Input Capacitance (Ciss) (Max) @ Vds :
- 315pF @ 100V
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Datasheets
- STP9N65M2
N-Channel Tube 900m Ω @ 2.5A, 10V ±25V 315pF @ 100V 10nC @ 10V TO-220-3
STP9N65M2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 315pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 22.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP9N65M2 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 22.5 ns
a threshold voltage of 3V
STP9N65M2 Applications
There are a lot of STMicroelectronics
STP9N65M2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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