STP9NM40N

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Mfr.Part #
STP9NM40N
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 5.6A TO220
Stock
8,034
In Stock :
8,034

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
MDmesh™ II
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn On Delay Time :
7 ns
Element Configuration :
Single
Radiation Hardening :
No
Power Dissipation-Max :
60W Tc
Operating Temperature :
150°C TJ
Current - Continuous Drain (Id) @ 25°C :
5.6A Tc
Base Part Number :
STP9N
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Turn-Off Delay Time :
25 ns
Continuous Drain Current (ID) :
5.6A
Rise Time :
4.4ns
Number of Pins :
3
Package / Case :
TO-220-3
Drain to Source Breakdown Voltage :
400V
Input Capacitance (Ciss) (Max) @ Vds :
365pF @ 50V
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
25V
Rds On (Max) @ Id, Vgs :
790m Ω @ 2.5A, 10V
Mount :
Through Hole
Fall Time (Typ) :
8.8 ns
Packaging :
Tube
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±25V
Datasheets
STP9NM40N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP9NM40N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:STP9N, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, STP9NM40N pinout, STP9NM40N datasheet PDF, STP9NM40N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP9NM40N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP9NM40N


N-Channel Tube 790m Ω @ 2.5A, 10V ±25V 365pF @ 50V 14nC @ 10V TO-220-3

STP9NM40N Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 365pF @ 50V.This device has a continuous drain current (ID) of [5.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=400V, the drain-source breakdown voltage is 400V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Its overall power consumption can be reduced by using drive voltage (10V).

STP9NM40N Features


a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 25 ns


STP9NM40N Applications


There are a lot of STMicroelectronics
STP9NM40N applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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