STP9NK80Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Element Configuration :

Single

Power Dissipation-Max :

150W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STP9N

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Avalanche Energy Rating (Eas) :

350 mJ

Voltage - Rated DC :

800V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Resistance :

1.2Ohm

Series :

SuperMESH™

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

30A

Power Dissipation :

150W

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Fall Time (Typ) :

18 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

7.5A

Current Rating :

7.5A

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

JESD-609 Code :

e3

Pin Count :

3

Rise Time :

19ns

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Vgs (Max) :

±30V

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

800V

Turn-Off Delay Time :

58 ns

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED