STP9NK70Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Turn-Off Delay Time :

45 ns

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

115W

Package / Case :

TO-220-3

Lead Free :

Lead Free

Series :

SuperMESH™

Threshold Voltage :

3.75V

Width :

4.6mm

Transistor Element Material :

SILICON

Number of Pins :

3

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Power Dissipation-Max :

115W Tc

RoHS Status :

ROHS3 Compliant

Length :

10.4mm

Number of Terminations :

3

Base Part Number :

STP9N

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 25V

Drain to Source Breakdown Voltage :

700V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Height :

16.4mm

Rise Time :

17ns

Turn On Delay Time :

22 ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

FET Type :

N-Channel

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

13 ns

Current Rating :

7.5A

Continuous Drain Current (ID) :

4A

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 4A, 10V

Voltage - Rated DC :

700V

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

ECCN Code :

EAR99

JESD-609 Code :

e3

Packaging :

Tube

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc