STP9NK65ZFP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

20 ns

Drain to Source Breakdown Voltage :

650V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.2A, 10V

Number of Terminations :

3

Base Part Number :

STP9N

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

200 mJ

JESD-609 Code :

e3

Rise Time :

12ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6.4A Tc

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

1145pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Case Connection :

Isolated

Number of Pins :

3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

25.6A

Fall Time (Typ) :

15 ns

ECCN Code :

EAR99

Vgs (Max) :

±30V

Packaging :

Tube

Mount :

Through Hole

Continuous Drain Current (ID) :

6.4A

Operating Temperature :

-55°C~150°C TJ

Series :

SuperMESH™

Power Dissipation-Max :

30W Tc

Turn-Off Delay Time :

45 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

30W