STI18N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Drain-source On Resistance-Max :

0.22Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 100V

Turn-Off Delay Time :

11 ns

Base Part Number :

STI18N

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

60A

Power Dissipation-Max :

110W Tc

Drain to Source Breakdown Voltage :

650V

Mount :

Through Hole

Turn On Delay Time :

36 ns

Rds On (Max) @ Id, Vgs :

220m Ω @ 7.5A, 10V

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

3

Rise Time :

7ns

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

15A Tc

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power Dissipation :

110W

Fall Time (Typ) :

9 ns

Mounting Type :

Through Hole

Radiation Hardening :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Continuous Drain Current (ID) :

15A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Series :

MDmesh™ V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel