STI10NM60N
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- Mfr.Part #
- STI10NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A I2PAK
- Stock
- 7,667
- In Stock ：
- 7,667
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Fall Time (Typ) :
- 15 ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 50V
- Drain to Source Voltage (Vdss) :
- 600V
- Drain to Source Breakdown Voltage :
- 650V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 12ns
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Turn On Delay Time :
- 10 ns
- Continuous Drain Current (ID) :
- 10A
- Vgs (Max) :
- ±25V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 25V
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 4A, 10V
- Packaging :
- Tube
- Power Dissipation-Max :
- 70W Tc
- Series :
- MDmesh™ II
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- FET Type :
- N-Channel
- Power Dissipation :
- 70W
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STI10N
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 32 ns
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Datasheets
- STI10NM60N
N-Channel Tube 550m Ω @ 4A, 10V ±25V 540pF @ 50V 19nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
STI10NM60N Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 540pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 32 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STI10NM60N Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 32 ns
a 600V drain to source voltage (Vdss)
STI10NM60N Applications
There are a lot of STMicroelectronics
STI10NM60N applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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