STI16N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

6 ns

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation-Max :

90W Tc

Avalanche Energy Rating (Eas) :

200 mJ

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Number of Pins :

3

Series :

MDmesh™ V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

48A

Continuous Drain Current (ID) :

12A

Number of Terminations :

3

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

12A Tc

FET Type :

N-Channel

Power Dissipation :

25W

Transistor Application :

SWITCHING

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Breakdown Voltage :

650V

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Turn On Delay Time :

25 ns

Rise Time :

7ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 100V

JESD-609 Code :

e3

Packaging :

Tube

Number of Elements :

1

Drain-source On Resistance-Max :

0.279Ohm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

8 ns

Pin Count :

3

Base Part Number :

STI16N

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

279m Ω @ 6A, 10V