STI15NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Through Hole

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

299m Ω @ 7A, 10V

Drain to Source Breakdown Voltage :

600V

Mount :

Through Hole

Packaging :

Tube

Fall Time (Typ) :

28 ns

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Power Dissipation :

125W

Turn On Delay Time :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

56A

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

20ns

Base Part Number :

STI15N

Power Dissipation-Max :

125W Tc

Turn-Off Delay Time :

47 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Series :

FDmesh™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.299Ohm

Number of Terminations :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

14A

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V