STI12N65M5
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- Mfr.Part #
- STI12N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8.5A I2PAK
- Stock
- 21,697
- In Stock ：
- 21,697
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 15.6 ns
- Number of Pins :
- 3
- Turn On Delay Time :
- 22.6 ns
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Tc
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Height :
- 9.35mm
- Length :
- 10.4mm
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Series :
- MDmesh™ V
- Base Part Number :
- STI12N
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 4V
- Pin Count :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 70W Tc
- Vgs (Max) :
- ±25V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 4.3A, 10V
- Rise Time :
- 17.6ns
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Turn-Off Delay Time :
- 15.6 ns
- Power Dissipation :
- 70W
- Gate to Source Voltage (Vgs) :
- 25V
- Width :
- 4.6mm
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 100V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 8.5A
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 650V
- JESD-609 Code :
- e3
- Datasheets
- STI12N65M5
N-Channel Tube 430m Ω @ 4.3A, 10V ±25V 900pF @ 100V 22nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STI12N65M5 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 900pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.5A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [15.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 22.6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STI12N65M5 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 15.6 ns
a threshold voltage of 4V
STI12N65M5 Applications
There are a lot of STMicroelectronics
STI12N65M5 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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