STI14NM50N
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- Mfr.Part #
- STI14NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N CH 500V 12A I2PAK
- Stock
- 756
- In Stock ：
- 756
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Rise Time :
- 16ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 12A
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Fall Time (Typ) :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 42 ns
- Base Part Number :
- STI14N
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 6A, 10V
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 816pF @ 50V
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation :
- 90W
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- MDmesh™ II
- Number of Pins :
- 3
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 90W Tc
- Turn On Delay Time :
- 10.2 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 25V
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- FET Type :
- N-Channel
- Datasheets
- STI14NM50N
N-Channel Tube 320m Ω @ 6A, 10V ±25V 816pF @ 50V 27nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STI14NM50N Overview
A device's maximum input capacitance is 816pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STI14NM50N Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 42 ns
STI14NM50N Applications
There are a lot of STMicroelectronics
STI14NM50N applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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