STI11NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

43.6nC @ 10V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.4Ohm

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Rise Time :

17ns

Series :

MDmesh™

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Turn On Delay Time :

22 ns

Number of Terminations :

3

Fall Time (Typ) :

15 ns

Mounting Type :

Through Hole

Additional Feature :

ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

400m Ω @ 5.5A, 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

11A

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

400 mJ

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Turn-Off Delay Time :

46 ns

Drain to Source Breakdown Voltage :

800V

Base Part Number :

STI11N

Pin Count :

3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

150W Tc

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

44A

Radiation Hardening :

No

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation :

150W

Operating Temperature :

-65°C~150°C TJ