STI150N10F7
- Mfr.Part #
- STI150N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A I2PAK
- Stock
- 346
- In Stock :
- 346
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 33 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 117nC @ 10V
- Continuous Drain Current (ID) :
- 110A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 55A, 10V
- ECCN Code :
- EAR99
- Rise Time :
- 57ns
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 250W Tc
- Turn On Delay Time :
- 33 ns
- Number of Channels :
- 1
- Element Configuration :
- Single
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 72 ns
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Weight :
- 2.084002g
- Base Part Number :
- STI150N
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Series :
- STripFET™
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 8115pF @ 50V
- Resistance :
- 3.6mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Drain to Source Voltage (Vdss) :
- 100V
- FET Type :
- N-Channel
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STI150N10F7

N-Channel Tube 4.2m Ω @ 55A, 10V ±20V 8115pF @ 50V 117nC @ 10V 100V TO-262-3 Long Leads, I2Pak, TO-262AA
STI150N10F7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8115pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 110A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 33 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STI150N10F7 Features
a continuous drain current (ID) of 110A
the turn-off delay time is 72 ns
a 100V drain to source voltage (Vdss)
STI150N10F7 Applications
There are a lot of STMicroelectronics
STI150N10F7 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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