STI15NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Mount :

Through Hole

Power Dissipation :

125W

Element Configuration :

Single

Number of Elements :

1

Packaging :

Tube

JESD-609 Code :

e3

Mounting Type :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

25V

Series :

MDmesh™ II

Pulsed Drain Current-Max (IDM) :

56A

Fall Time (Typ) :

30 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

299m Ω @ 7A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Base Part Number :

STI15N

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Number of Pins :

3

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

14A

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±25V

Pin Count :

3

Turn-Off Delay Time :

80 ns

Peak Reflow Temperature (Cel) :

245

Drain-source On Resistance-Max :

0.299Ohm

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

14ns

Power Dissipation-Max :

125W Tc

Terminal Finish :

MATTE TIN