STI10N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Series :

SuperMESH3™

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

620V

Threshold Voltage :

3.75V

Width :

4.6mm

Mount :

Through Hole

Length :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

8.4A Tc

Mounting Type :

Through Hole

FET Type :

N-Channel

Turn-Off Delay Time :

41 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain-source On Resistance-Max :

0.75Ohm

Rise Time :

15ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

750m Ω @ 4A, 10V

Height :

10.75mm

Power Dissipation-Max :

125W Tc

Packaging :

Tube

Number of Terminations :

3

Fall Time (Typ) :

31 ns

Turn On Delay Time :

14.5 ns

Pin Count :

3

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain to Source Voltage (Vdss) :

620V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STI10N

Avalanche Energy Rating (Eas) :

220 mJ

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Continuous Drain Current (ID) :

8.4A