STI18N65M2
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- Mfr.Part #
- STI18N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 12A I2PAK
- Stock
- 2,803
- In Stock ：
- 2,803
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Turn-Off Delay Time :
- 46 ns
- Turn On Delay Time :
- 11 ns
- Drain to Source Resistance :
- 330mOhm
- Base Part Number :
- STI18N
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 100V
- Drain to Source Voltage (Vdss) :
- 650V
- Rds On Max :
- 330 mΩ
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Length :
- 10.4mm
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 110W Tc
- Input Capacitance :
- 770pF
- Operating Temperature :
- 150°C TJ
- Rds On (Max) @ Id, Vgs :
- 330mOhm @ 6A, 10V
- Number of Pins :
- 3
- Supplier Device Package :
- I2PAK
- Series :
- MDmesh™ M2
- Max Operating Temperature :
- 150°C
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Height :
- 9.35mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Width :
- 4.6mm
- Factory Lead Time :
- 16 Weeks
- Datasheets
- STI18N65M2
N-Channel Tube 330mOhm @ 6A, 10V ±25V 770pF @ 100V 20nC @ 10V 650V TO-262-3 Long Leads, I2Pak, TO-262AA
STI18N65M2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 770pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.It is [46 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 330mOhm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
STI18N65M2 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 46 ns
single MOSFETs transistor is 330mOhm
a 650V drain to source voltage (Vdss)
STI18N65M2 Applications
There are a lot of STMicroelectronics
STI18N65M2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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