STI17NF25
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- Mfr.Part #
- STI17NF25
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 17A I2PAK
- Stock
- 47,717
- In Stock ：
- 47,717
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 17A
- Turn On Delay Time :
- 8.8 ns
- Drain to Source Breakdown Voltage :
- 250V
- FET Type :
- N-Channel
- Terminal Finish :
- MATTE TIN
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Fall Time (Typ) :
- 8.8 ns
- Pulsed Drain Current-Max (IDM) :
- 68A
- JESD-30 Code :
- R-PSIP-T3
- Base Part Number :
- STI17N
- Pin Count :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Rise Time :
- 17.2ns
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 8.5A, 10V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 90W Tc
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Turn-Off Delay Time :
- 21 ns
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 245
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-609 Code :
- e3
- Power Dissipation :
- 90W
- Series :
- STripFET™ II
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain-source On Resistance-Max :
- 0.165Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 29.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 25V
- Datasheets
- STI17NF25
N-Channel Tube 165m Ω @ 8.5A, 10V ±20V 1000pF @ 25V 29.5nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STI17NF25 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 1000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 17A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.Its maximum pulsed drain current is 68A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STI17NF25 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 68A.
STI17NF25 Applications
There are a lot of STMicroelectronics
STI17NF25 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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