STI16NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

245

Drain-source On Resistance-Max :

0.26Ohm

Continuous Drain Current (ID) :

15A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Turn-Off Delay Time :

60 ns

JESD-609 Code :

e3

Packaging :

Tube

Number of Elements :

1

Series :

MDmesh™ II

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

15ns

Vgs (Max) :

±25V

Mounting Type :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

470 mJ

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

125W Tc

Operating Temperature :

150°C TJ

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

260m Ω @ 7.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

16 ns

Pulsed Drain Current-Max (IDM) :

60A

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

JESD-30 Code :

R-PSIP-T3

Base Part Number :

STI16N

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Drain to Source Breakdown Voltage :

500V

Power Dissipation :

125W

Pin Count :

3