STGW80H65DFB

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Mfr.Part #
STGW80H65DFB
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 650V 120A 469W TO-247
Stock
2,945
In Stock :
2,945

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Collector Emitter Breakdown Voltage :
650V
IGBT Type :
Trench Field Stop
Gate-Emitter Voltage-Max :
20V
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Test Condition :
400V, 80A, 10 Ω, 15V
Weight :
38.000013g
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
5.15mm
Number of Pins :
3
Gate Charge :
414nC
RoHS Status :
ROHS3 Compliant
Max Collector Current :
120A
Height :
20.15mm
Factory Lead Time :
20 Weeks
Collector Emitter Voltage (VCEO) :
650V
Power - Max :
469W
Current - Collector Pulsed (Icm) :
240A
Lead Free :
Lead Free
Operating Temperature :
-55°C~175°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Part Number :
STGW80
Max Power Dissipation :
469W
Td (on/off) @ 25°C :
84ns/280ns
Mount :
Through Hole
Length :
15.75mm
Collector Emitter Saturation Voltage :
1.6V
Package / Case :
TO-247-3
Packaging :
Tube
Input Type :
Standard
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reverse Recovery Time :
85 ns
ECCN Code :
EAR99
Switching Energy :
2.1mJ (on), 1.5mJ (off)
Mounting Type :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 80A
Datasheets
STGW80H65DFB
Introducing Transistors - IGBTs - Single STMicroelectronics STGW80H65DFB from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Base Part Number:STGW80, Package / Case:TO-247-3, Mounting Type:Through Hole, STGW80H65DFB pinout, STGW80H65DFB datasheet PDF, STGW80H65DFB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW80H65DFB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW80H65DFB


STGW80H65DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

Description: The STGW80H65DFB is a single N-channel insulated gate bipolar transistor (IGBT) from STMicroelectronics. It is designed for use in high-power switching applications and features a maximum collector-emitter voltage of 650V and a maximum collector current of 120A. It is packaged in a 3-pin (3+Tab) TO-247 tube.

Features:
- Maximum collector-emitter voltage of 650V
- Maximum collector current of 120A
- Low on-state voltage drop
- Low gate charge
- Low switching losses
- High frequency operation
- High surge current capability
- High temperature operation
- RoHS compliant

Applications: The STGW80H65DFB is suitable for use in a variety of high-power switching applications, such as motor control, power supplies, UPS systems, and solar inverters. It is also suitable for use in automotive applications, such as electric vehicle traction systems.
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