STGW20H65FB

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Mfr.Part #
STGW20H65FB
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 650V 40A 168W TO247
Stock
48,252
In Stock :
48,252

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Max Collector Current :
40A
Number of Pins :
3
Element Configuration :
Single
Power - Max :
168W
Package / Case :
TO-247-3
Operating Temperature :
-55°C~175°C TJ
Collector Emitter Saturation Voltage :
1.55V
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Breakdown Voltage :
650V
IGBT Type :
Trench Field Stop
Max Power Dissipation :
168W
Base Part Number :
STGW20
Current - Collector Pulsed (Icm) :
80A
Weight :
38.000013g
Test Condition :
400V, 20A, 10 Ω, 15V
Factory Lead Time :
20 Weeks
Gate Charge :
120nC
Switching Energy :
77μJ (on), 170μJ (off)
Gate-Emitter Voltage-Max :
20V
ECCN Code :
EAR99
Lead Free :
Lead Free
Td (on/off) @ 25°C :
30ns/139ns
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 20A
Gate-Emitter Thr Voltage-Max :
7V
Collector Emitter Voltage (VCEO) :
650V
Input Type :
Standard
Mounting Type :
Through Hole
Datasheets
STGW20H65FB
Introducing Transistors - IGBTs - Single STMicroelectronics STGW20H65FB from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Base Part Number:STGW20, Mounting Type:Through Hole, STGW20H65FB pinout, STGW20H65FB datasheet PDF, STGW20H65FB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW20H65FB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW20H65FB


STGW20H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW20H65FB Description


STGW20H65FB, a part of the new HB series of IGBTs, is a type of  IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high frequency converters. Safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. 



STGW20H65FB Features


Advanced proprietary trench gate field-stop structure

PositiveVCE(sat) temperature coefficient 

Very tight parameter distribution

Low thermal resistance



STGW20H65FB Applications


Photovoltaic inverters

Power factor correction

Welding

High-frequency converters


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