STGW19NC60WD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Rise Time :

7ns

Number of Pins :

3

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

25ns/90ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

20.15mm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

JESD-609 Code :

e3

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 12A

Collector Emitter Breakdown Voltage :

600V

Base Part Number :

STGW19

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

600V

Package / Case :

TO-247-3

Mount :

Through Hole

Mounting Type :

Through Hole

Series :

PowerMESH™

Gate Charge :

53nC

Width :

5.15mm

REACH SVHC :

No SVHC

Packaging :

Tube

Max Collector Current :

42A

Collector Emitter Saturation Voltage :

2.5V

Turn Off Time-Nom (toff) :

204 ns

Element Configuration :

Single

Reverse Recovery Time :

31ns

Gate-Emitter Thr Voltage-Max :

5.75V

Turn On Time :

33 ns

Length :

15.75mm

Number of Terminations :

3

ECCN Code :

EAR99

Max Power Dissipation :

125W

Test Condition :

390V, 12A, 10 Ω, 15V

Radiation Hardening :

No

Switching Energy :

81μJ (on), 125μJ (off)

Input Type :

Standard

Number of Elements :

1

Transistor Application :

POWER CONTROL

Transistor Element Material :

SILICON

Turn-Off Delay Time :

90 ns

Turn On Delay Time :

25 ns

Power Dissipation :

125W