STGW15S120DF3

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Mfr.Part #
STGW15S120DF3
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 1200V 15A TO247
Stock
16
In Stock :
16

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Collector Emitter Voltage (VCEO) :
2.05V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
Not Applicable
Voltage - Collector Emitter Breakdown (Max) :
1200V
Operating Temperature :
-55°C~175°C TJ
Switching Energy :
540μJ (on), 1.38mJ (off)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reverse Recovery Time :
270 ns
Packaging :
Tube
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
1.2kV
IGBT Type :
Trench Field Stop
Input Type :
Standard
Mounting Type :
Through Hole
Mount :
Through Hole
REACH SVHC :
No SVHC
Td (on/off) @ 25°C :
23ns/140ns
Gate Charge :
53nC
Vce(on) (Max) @ Vge, Ic :
2.05V @ 15V, 15A
Current - Collector Pulsed (Icm) :
60A
Package / Case :
TO-247-3
Power - Max :
259W
Max Collector Current :
30A
RoHS Status :
ROHS3 Compliant
Test Condition :
600V, 15A, 22 Ω, 15V
Base Part Number :
STGW15
Max Power Dissipation :
259W
Factory Lead Time :
40 Weeks
Datasheets
STGW15S120DF3
Introducing Transistors - IGBTs - Single STMicroelectronics STGW15S120DF3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Base Part Number:STGW15, STGW15S120DF3 pinout, STGW15S120DF3 datasheet PDF, STGW15S120DF3 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW15S120DF3 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW15S120DF3


STGW15S120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW15S120DF3 Description


STGW15S120DF3, part of the S series of 1200 V IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is specifically designed to achieve maximal efficiency in low-frequency industrial systems. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.



STGW15S120DF3 Features


Available in the TO-247-3 package

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and fast recovery antiparallel diode



STGW15S120DF3 Applications


Industrial drives

UPS

Solar

Welding


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