STGW15H120DF2
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- Mfr.Part #
- STGW15H120DF2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT H-SERIES 1200V 15A TO-247
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- ECCN Code :
- EAR99
- Gate-Emitter Voltage-Max :
- 20V
- Gate-Emitter Thr Voltage-Max :
- 7V
- Switching Energy :
- 380μJ (on), 370μJ (off)
- Max Collector Current :
- 30A
- Weight :
- 38.000013g
- Max Power Dissipation :
- 259W
- Base Part Number :
- STGW15
- Input Type :
- Standard
- Collector Emitter Saturation Voltage :
- 2.1V
- Td (on/off) @ 25°C :
- 23ns/111ns
- IGBT Type :
- Trench Field Stop
- Mount :
- Through Hole
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Mounting Type :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 60A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 32 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Element Configuration :
- Single
- Package / Case :
- TO-247-3
- Test Condition :
- 600V, 15A, 10 Ω, 15V
- Power - Max :
- 259W
- Gate Charge :
- 67nC
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Reverse Recovery Time :
- 231 ns
- Datasheets
- STGW15H120DF2
STGW15H120DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW15H120DF2 Description
STGW15H120DF2, a part of the new HB series of IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high frequency converters. Safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. The STGW15H120DF2 is embedded in the TO247 package for the purpose of saving board space.
STGW15H120DF2 Features
Advanced proprietary trench gate field-stop structure
PositiveVCE(sat) temperature coefficient
Very tight parameter distribution
Package: TO247
Low thermal resistance
STGW15H120DF2 Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
High frequency converters
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