STGW45NC60VD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Turn On Delay Time :

33 ns

Mount :

Through Hole

Turn-Off Delay Time :

178 ns

Turn Off Time-Nom (toff) :

366 ns

Reverse Recovery Time :

45ns

Gate-Emitter Thr Voltage-Max :

5.75V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 30A

Element Configuration :

Single

Test Condition :

390V, 30A, 10 Ω, 15V

Max Collector Current :

90A

Input Type :

Standard

Switching Energy :

333μJ (on), 537μJ (off)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Number of Terminations :

3

Turn On Time :

46 ns

Series :

PowerMESH™

Pin Count :

3

Gate-Emitter Voltage-Max :

20V

Power Dissipation :

270W

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

600V

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

600V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

270W

ECCN Code :

EAR99

Base Part Number :

STGW45

Package / Case :

TO-247-3

Collector Emitter Saturation Voltage :

2.4V

Number of Elements :

1

Gate Charge :

126nC

Td (on/off) @ 25°C :

33ns/178ns

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

220A

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel