STGW40V60DLF

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Mfr.Part #
STGW40V60DLF
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 80A 283W TO247
Stock
2,365
In Stock :
2,365

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Width :
5.15mm
IGBT Type :
Trench Field Stop
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate-Emitter Voltage-Max :
20V
Height :
20.15mm
Package / Case :
TO-247-3
Number of Pins :
3
Factory Lead Time :
20 Weeks
Max Collector Current :
80A
Td (on/off) @ 25°C :
-/208ns
Test Condition :
400V, 40A, 10 Ω, 15V
Radiation Hardening :
No
Length :
15.75mm
Power Dissipation :
283W
Current - Collector Pulsed (Icm) :
160A
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Collector Emitter Saturation Voltage :
2.35V
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 40A
Collector Emitter Voltage (VCEO) :
600V
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Max Power Dissipation :
283W
Switching Energy :
411μJ (off)
Mounting Type :
Through Hole
Input Type :
Standard
Base Part Number :
STGW40
Mount :
Through Hole
Gate Charge :
226nC
Packaging :
Tube
Collector Emitter Breakdown Voltage :
600V
Operating Temperature :
-55°C~175°C TJ
Datasheets
STGW40V60DLF
Introducing Transistors - IGBTs - Single STMicroelectronics STGW40V60DLF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:STGW40, Operating Temperature:-55°C~175°C TJ, STGW40V60DLF pinout, STGW40V60DLF datasheet PDF, STGW40V60DLF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW40V60DLF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW40V60DLF


STGW40V60DLF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW40V60DLF Description


An IGBT called the STGW40V60DLF was created employing a cutting-edge, proprietary trench gate field stop construction. The component is a part of the V series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of very high-frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat)temperature coefficient and very narrow parameter distribution.



STGW40V60DLF Features


  • Safe paralleling

  • Tail-less switching off

  • Low thermal resistance

  • Tight parameters distribution

  • VCE(sat)= 1.8 V (typ.) @ IC= 40 A

  • Designed for soft commutation only

  • Low VFsoft recovery co-packaged diode

  • Maximum junction temperature: TJ= 175 °C



STGW40V60DLF Applications


  • Industrial

  • Personal electronics

  • Communications equipment 


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