STGW40H65FB

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Mfr.Part #
STGW40H65FB
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 650V 80A 283W TO247
Stock
239
In Stock :
239

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Collector Emitter Breakdown Voltage :
650V
Collector Emitter Voltage (VCEO) :
650V
Input Type :
Standard
Td (on/off) @ 25°C :
40ns/142ns
Height :
20.15mm
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 40A
Factory Lead Time :
20 Weeks
Number of Pins :
3
Package / Case :
TO-247-3
Length :
15.75mm
Switching Energy :
498mJ (on), 363mJ (off)
IGBT Type :
Trench Field Stop
ECCN Code :
EAR99
Mount :
Through Hole
Max Power Dissipation :
283W
Width :
5.15mm
Lead Free :
Lead Free
Element Configuration :
Single
Current - Collector Pulsed (Icm) :
160A
Mounting Type :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Base Part Number :
STGW40
Power Dissipation :
283W
Max Collector Current :
80A
Collector Emitter Saturation Voltage :
1.6V
Gate Charge :
210nC
Test Condition :
400V, 40A, 5 Ω, 15V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Radiation Hardening :
No
Datasheets
STGW40H65FB
Introducing Transistors - IGBTs - Single STMicroelectronics STGW40H65FB from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Base Part Number:STGW40, STGW40H65FB pinout, STGW40H65FB datasheet PDF, STGW40H65FB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW40H65FB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW40H65FB


STGW40H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW40H65FB Description


The STGW40H65FB is an IGBT developed using an advanced proprietary trench gate field-stop structure. 



STGW40H65FB Features


  • Maximum junction temperature: TJ = 175 °C

  • High-speed switching series

  • Minimized tail current

  • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A

  • Safe paralleling

  • Tight parameter distribution

  • Low thermal resistance



STGW40H65FB Applications


  • Photovoltaic inverters

  • High-frequency converters


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